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  Datasheet File OCR Text:
 SHINDENGEN
Schottky Rectifiers (SBD)
Dual
SF20SC4
40V 20A
FEATURES
*oeTj150*Z
OUTLINE DIMENSIONS
Case : FTO-220 Unit : mm
*oe PRRSM avalanche guaranteed
*oe Fully Isolated Molding *oe High current capacity with Small Package *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55*150 *Z Tj 150 *Z Operating Junction Temperature V Maximum Reverse Voltage RM 40 V VReverse width 0.5ms, duty 1/40 45 V Repetitive Peak SurgeRRSM Voltage Pulse I 50Hz sine O 20 A Average Rectified Forward Currentwave, R-load, Rating for each diode Io/2, Tc=1 I 50Hz Peak Surge Forward Current sine wave, Non-repetitive 1 cycle peak value, Ratin FSM 230 A PReverse width 660 W Repetitive Peak SurgeRRSM Power 10Es, Rating of per diode, Tj=25*Z Pulse Dielectric Strength VdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque* 0.3Nm) F 0.5 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit V I=10A, Pulse measurement, Rating ofMax.0.55 FF per diode V Forward Voltage I V=VM, Reverse Current R R R Pulse measurement, Rating of perMax.7.5 A diode m =10V, Typ.390 F p Junction Capacitance Cj f=1MHz, V Rating of per diode R Thermal Resistance AEjc junction to case Max.2.0 *Z/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
SF20SC4
Forward Voltage
10
Forward Current IF [A]
Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] 1 Tc=25C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
SF20SC4
Junction Capacitance
f=1MHz Tc=25C TYP per diode
Junction Capacitance Cj [pF]
1000
100
0.1
1
10
Reverse Voltage VR [V]
SF20SC4
1000
Reverse Current
Tc=150C [MAX]
Tc=150C [TYP] 100
Reverse Current IR [mA]
Tc=125C [TYP]
10
Tc=100C [TYP]
Tc=75C [TYP]
1
Pulse measurement per diode
0.1
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
SF20SC4
35
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
30
DC D=0.05 0.1 0.2 0.3
25
20
15
0.5
10 SIN 0.8
5
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
SF20SC4
20
Forward Power Dissipation
DC D=0.8
Forward Power Dissipation PF [W]
15 0.2 0.05 10 0.1 0.3
SIN
0.5
5
0
0
5
10
15
20
25
30
35
Average Rectified Forward Current IO [A]
Tj = 150C 0 tp D=tp /T T
IO
SF20SC4
40
Derating Curve
Average Rectified Forward Current IO [A]
35 DC 30 D=0.8 25 20 0.5 SIN 0.3
15 0.2 10 5 0 0.1 0.05
0
20
40
60
80
100
120
140
160
Case Temperature Tc [C]
VR = 20V 0 0
IO
VR tp D=tp /T T
SF20SC4
300
Peak Surge Forward Capability
IFSM
10ms 10ms
250
1 cycle
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25C before surge current is applied
200
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP


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